Fig. 2: Simulation of the crosstalk suppression effect at a temperature (T) of 300 K. | Nature Communications

Fig. 2: Simulation of the crosstalk suppression effect at a temperature (T) of 300 K.

From: High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure

Fig. 2

The distribution of crosstalk current at unity gain (single-photon avalanche diode (SPAD) reverse bias voltage = punch-through voltage, Vph) for a the conventional device (without carrier extraction structure (CES)), and b the device with CES, the reverse bias voltage applied on the CES (Vces) is 0 V. Figures show the doping concentration in each layer (color legend on the right) and the crosstalk current density (blue streamlines). The CES diffusion window width (D) is set to 2 μm. c Simulated crosstalk current-voltage (I–V) curves of the SPAD. Inset: the enlarged portion near Vph, illustrating when the CES is operated at a larger Vces, the crosstalk suppression is slightly improved. d Simulated dark current (Id) and photocurrent (Ip) voltage characteristics of the SPAD (solid lines) and the CES (dotted lines).

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