Fig. 1: MBE-grown 3 QL V-doped (Bi,Sb)2Te3/100 QL (Bi,Sb)2Te3/3 QL Cr-doped (Bi,Sb)2Te3 sandwich (i.e., the m = 100 sample). | Nature Communications

Fig. 1: MBE-grown 3 QL V-doped (Bi,Sb)2Te3/100 QL (Bi,Sb)2Te3/3 QL Cr-doped (Bi,Sb)2Te3 sandwich (i.e., the m = 100 sample).

From: Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

Fig. 1

a Cross-sectional STEM image. Inset: the EDS map of V (Cr) near the top (bottom) surface layers of the sample. b, c Magnetic field μ0H dependence of the longitudinal resistance ρxx (b) and the Hall resistance ρyx (c) at Vg = Vg0 = 0 V. At T = 70 mK and Vg = Vg0 = 0 V, the observations of the zero ρyx plateau and huge ρxx between coercive fields of the top V- and the bottom Cr-doped TI layers indicate this m = 100 sample is in the axion insulator state.

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