Fig. 1: Characterization of high-quality HfTe5 single crystals. | Nature Communications

Fig. 1: Characterization of high-quality HfTe5 single crystals.

From: Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

Fig. 1

a Crystal structure of HfTe5. Te-d, Te-z, and Te-a represent Te atoms at dimer, zig-zag, and apical positions, respectively. The red dashed triangles depict the base of the Hf centered HfTe3 prism. b, c ARPES results for the dispersions along X-Γ-X and Y-Γ-Y directions, respectively. The bright green lines are the band dispersions calculated by DFT, which agree well with the ARPES data. d Temperature (T) dependence of the resistivity (\({\rho }_{{xx}}\)) for a free-standing HfTe5 sample, F1, without any external strain applied. Inset: An optical image of a belt-like HfTe5 single crystal, and the scale bar represents 0.2 mm. e Longitudinal (\({\rho }_{{xx}}\)) and Hall (\({\rho }_{{xy}}\)) resistivity of F1 plotted as a function of magnetic field (B) up to 9 T at T = 1.5 K. The arrows mark the Landau level indices n = 1 and 2.

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