Fig. 2: Experimental procedure for doping a Mott insulator.
From: Commensurate and incommensurate 1D interacting quantum systems
a Time-dependent variation of the x-lattice potential, Vx. Numbers in circles indicate the stages at which measurements are performed: (1) after preparation of a commensurate system in a Mott-insulating state at Vi = 50(2) Er; (2) after preparation of a superfluid state in a shallow lattice, Vc = 2.8(4) Er; (3) after creating an incommensurate system by dynamically compressing the superfluid, (4) after increasing the lattice depth to reach the strongly interacting regime again, Vf = 16(1) Er. b–e Reconstructed lattice occupation of one experimental realisation, showing the repulsive potential (grey), atoms (dark red) and observed empty sites (light red) that result from both holes and doublons. White dashed lines indicate rows excluded from the statistics by post-selection. f–i Observed probabilities of detecting an empty site. j–m Probability vs number of empty sites for the same system. Each histogram is obtained by averaging over 260–380 independent 1D systems, and all error bars are the 95% Clopper-Pearson confidence intervals.
