Table 2 Summary of PIN device parameters for various irradiation conditions

From: Unraveling radiation damage and healing mechanisms in halide perovskites using energy-tuned dual irradiation dosing

Device

Rad. 1 (MeV, cm−2)

Rad. 2 (MeV, cm−2)

IEL x

JSC (mA cm−2)

VOC (Volts)

FF

PCE (%)

PCE remaining factor

1.

0.06,

1 × 1013

–

–

21.39 ± 0.15

1.07 ± 0.01

0.81 ± 0.00

18.72 ± 0.27

0.72 ± 0.05

18.68 ± 0.18

1.08 ± 0.00

0.67 ± 0.03

13.51 ± 0.96

2.

0.06,

0.97 × 1013

1.0,

1.13 × 1013

1.6

21.31 ± 0.16

1.08 ± 0.01

0.81 ± 0.01

18.66 ± 0.27

0.83 ± 0.05

19.93 ± 0.28

1.09 ± 0.00

0.71 ± 0.03

15.53 ± 0.91

3.

0.06,

0.93 × 1013

1.0,

2.64 × 1013

2.4

21.33 ± 0.18

1.07 ± 0.01

0.81 ± 0.01

18.50 ± 0.28

0.85 ± 0.02

19.99 ± 0.12

1.10 ± 0.01

0.72 ± 0.01

15.83 ± 0.28

4.

0.06,

0.90 × 1013

1.0,

3.8 × 1013

3.0

21.31 ± 0.14

1.07 ± 0.00

0.80 ± 0.01

18.46 ± 0.46

0.73 ± 0.11

17.89 ± 1.33

1.08 ± 0.02

0.70 ± 0.04

13.57 ± 2.07

5.

0.06,

0.70 × 1013

1.0,

1.13 × 1014

6.9

21.31 ± 0.10

1.07 ± 0.01

0.81 ± 0.01

18.35 ± 0.15

0.67 ± 0.07

17.11 ± 1.02

1.06 ± 0.01

0.67 ± 0.02

12.24 ± 1.34

6.

0.06,

0.50 × 1013

1.0,

1.9 × 1014

10.8

21.27 ± 0.09

1.08 ± 0.01

0.81 ± 0.00

18.50 ± 0.17

0.44 ± 0.04

12.73 ± 0.98

1.04 ± 0.00

0.61 ± 0.02

8.12 ± 0.74

7.

1.0, 3.8 × 1014

–

20.7

20.86 ± 0.31

1.07 ± 0.01

0.79 ± 0.02

17.54 ± 0.71

0.27 ± 0.05

8.22 ± 1.46

1.03 ± 0.00

0.56 ± 0.02

4.77 ± 0.93

  1. Parameters are averaged over 4–5 devices per condition. Error bars represent standard deviation. Top rows: pre-irradiation, Bottom rows: post-irradiation.
Back to article page