Fig. 2: Giant TER values in BSO-based FTJs.
From: Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions
a Quasi-static I–V sweeps for multiple cycles of a FTJ with BSO thickness of 1 nm. The voltages are applied on the metal side with the NSTO substrate grounded. Inset: cumulative probability distribution of LRS and HRS. b Over 7 × 105 TER achieved with −0.1 V read voltage. c Quasi-static I–V sweeps for multiple cycles of a FTJ with BSO thickness of 4.6 nm. Inset: cumulative probability distribution of LRS and HRS. d Over 1.2 × 109 TER achieved with −0.1 V read voltage. e Thickness effect on the TER values of BSO-based FTJs. The data of the FTJ with 2.1-nm BSO is extracted from Supplementary Fig. 5. The colored ranges in the box chart (25–75%) show the interquartile range (IQR), which is between the first and third quartile of the data distribution, and the error bars show the range within 1.5 IQR. f Comparison of TER values among ultra-thin FTJs with different ferroelectric materials and thicknesses. The purple squares are results of BTO-based devices from refs. 6,20,27. The magenta diamonds are results of PZT-based devices from refs. 29,30. The green triangle is result of the CuInP2S6 device from ref. 18. The blue hexagons are results of HZO-based devices from refs. 23,32. The brown triangles are results of BFO-based devices from refs. 28,31, and the black triangle is the result of the α-In2Se3-based device from ref. 33. For FTJs with 1-nm-thick ferroelectric layer, our BSO-based FTJs show three orders of magnitude improvement in TER. Our FTJs with 4.6-nm-thick BSO show the highest TER of 1.2 × 109.
