Fig. 5: Endurance, retention, and device-to-device variation of FTJs based on 1-nm-thick BSO. | Nature Communications

Fig. 5: Endurance, retention, and device-to-device variation of FTJs based on 1-nm-thick BSO.

From: Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Fig. 5

a Measured endurance properties showing more than 5 × 109 cycles under +2.2 V/−3.5 V programming pulses. b HRS and LRS resistances after 5 × 109 programming cycles, showing that the device can maintain TER over 100 by applying slightly larger programming voltages. c Measured retention property showing that TER over 105 can be maintained for more than 10 years. d HRS, LRS, and TER measured for 35 devices, showing small device-to-device variation.

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