Fig. 2: Transport data of PdSe2 transistors at low temperatures.

a Field effect mobility as a function of temperature of two PdSe₂ transistors that are ~3.5 nm(green) and 2.5 nm (red) in thickness. Dashed lines are fits to T^-γ. b SdH oscillations of device A4 versus V_tg and the perpendicular magnetic field B_⊥. To better display the oscillations, a smooth polynomial background is subtracted. c Energy contours of conduction band of 7-layer PdSe₂ in the k_x-k_y plane, showing the four valleys. To better showcase the valleys, segments of the axes are omitted (indicated by dotted lines). The MATLAB function interp2 was used to interpolate the first-principles results and generate the equal-energy contours at specific energies (see Supplementary Note 3). d Longitudinal resistance R_xx (red curve) and Hall resistance R_xy (blue curve) of device A5 plotted versus B_⊥ at V_bg = 80 V and T = 50 mK. Inserted values indicate the quantized Hall resistance. e R_xx(V_tg) of device A4 at B_⊥ = 7.5 T and different temperatures. f Normalized amplitude of oscillations in d plotted versus temperature, fitted to the Lifshitz-Kosevich equation.