Fig. 1: Schematic of OT-driven magnetization switching in Mn3Sn.
From: Effective electrical manipulation of a topological antiferromagnet by orbital torques
a Spin structure of Mn3Sn. The large blue and red circles (small black and silver circles) represent Mn (Sn) atoms. In two kagome planes with different chirality, blue and red arrows indicate the magnetic moments of Mn atoms in different layers. The green arrow indicates the M direction of the formed cluster magnetic octupole. b Schematic of ST-driven magnetization switching in Mn3Sn. Current in spin source layer can generate spin angular momentum S+(-) which is injected into Mn3Sn layer and exerts a torque on the kagome planes of Mn3Sn. c Schematic of OT-driven magnetization switching. Before being exerted on Mn3Sn, orbital angular momentum L+(-) induced by current in OT source layer needs to be converted to S+(-). d Stack structure of Mn3Sn/Cu/CuOx film and electrical measurement setup. e Longitudinal resistance of Mn3Sn/Cu device as a function of oxidation time. Inset illustrates RAHE versus applied magnetic field. f Current-induced magnetization switching loops in as-deposited Mn3Sn/Cu device and in Mn3Sn/Cu/CuOx device.
