Fig. 2: OT-driven magnetization switching in Mn3Sn/Pt(2 nm)/Mn(10 nm).
From: Effective electrical manipulation of a topological antiferromagnet by orbital torques
a Schematic of the Mn3Sn/Pt/Mn heterostructure. b OT-driven switching ratio as a function of Hex. The ratio saturates when Hex exceeds 2 kOe. Red (purple) region indicates the saturated switching ratio area in the positive (negative) magnetic field range. c Schematic of two stable magnetic states in Mn3Sn during OT-driven switching dynamics. d RAHE-J switching loops with different applied pulse width. e Minor switching loops of the sample by limiting the maximum current value Jmax in negative range, as indicated by the numbers in the figure.
