Fig. 3: Simulation results of potential distributions and electrons trajectories of the cathodes with different gates.
From: Boosting the electron beam transmittance of field emission cathode using a self-charging gate
a Schematic of electron beam (E-beam) divergence based on a single carbon nanotube (CNT) and the Au-gate, the surface potential (Vs) of the Au-gate is equal to 0. b Schematic of E-beam focusing based on a single CNT and the SiNx-gate, the Vs of the SiNx-gate is less than 0. The potential distributions between the carbon nanotubes (CNTs) emitter and the anode in the cathode equipped with (c) Au-gate and (d) SiNx-gate, respectively. A side-view cross-section of E-beam trajectories from the CNTs emitter to the anode in the cathode equipped with (e) Au-gate and (f) SiNx-gate, respectively.
