Fig. 2: Characterization of well-defined and conductive metal patterns in textiles.

a Optical image (left), cross-sectional schematic diagram (top right), and SEM image (bottom right) of the Cu pattern fabricated by the in-textile photolithography method. b Optical image (left), cross-sectional schematic diagram (top right), and SEM image (bottom right) of the Cu pattern fabricated by on-textile patterning method (screen printing). c Comparison of water vapor and air permeability of the fabrics coated with Cu made by the in-textile photolithography method and the on-textile patterning method. Error bars represent the s.d. of the mean from three fabrics coated with Cu. d Comparison of resistance changes (R/R₀) of the Cu patterns made by the in-textile photolithography method and on-textile patterning method. Inset is the digital image showing the flexibility of the Cu patterns made by two methods. e Linear resistance of the Cu patterns as a function of the patterning resolution. Error bars represent the s.d. of the mean from three Cu patterns. f Schematic diagram of the single-sided UV exposure (left) and optical images of the face side and back side of the Cu pattern made by in-textile photolithography (right). g Schematic diagram of the double-sided UV exposure (left) and optical images of the face side and back side of the Cu pattern made by in-textile photolithography (left). h Linear resistance of the Cu patterns as a function of the patterning resolution. Error bars represent the s.d. of the mean from three Cu patterns. i SEM images of the Polyester_0.90, Polyester_0.94, and Polyester_0.98 fabrics. 0.90, 0.94, and 0.98 are the fabric cover factors of the corresponding fabrics. j Linear resistance of the Cu patterns as a function of patterning resolution. Error bars represent the s.d. of the mean from three Cu patterns. k SEM images showing the precise Cu pattern with 100 µm linewidth (left) and 80 µm interspace between Cu patterns (right) in Polyester_0.98 fabrics.