Fig. 2: Transport properties of Fe2.84±0.05GaTe2 nanoflake.
a Optical image of Fe2.84±0.05GaTe2 Hall device with a sample thickness of 250 nm. A current Ixx was applied across the sample plane and transverse voltages Vxy were measured simultaneously. b Magnetic hysteresis of Hall resistivity \(\rho_{xy}\) at various temperatures from 350 to 10 K. Red (blue) curves were measured with increasing (decreasing) magnetic field. c Extraction procedure of normal Hall resistivity \(\rho^{N}_{xy}\), anomalous Hall resistivity \(\rho^{A}_{xy}\) and topological Hall resistivity \(\rho^{T}_{xy}\) at 300 K. The blue arrow indicates the sweep direction of the magnetic field pointing downward. d Magnetic hysteresis of topological Hall resistivity \(\rho^{T}_{xy}\) as a function of magnetic field at various temperatures from 350 K to 10 K. Red (blue) curves were extracted with increasing (decreasing) magnetic field.
