Fig. 1: Nonlocal transport measurement configuration and characterization of the SHE.
From: Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

a Schematic of the FGT/MoTe2 device for transport measurements. The external magnetic field is swept along z axis. The numbers represent the terminal positions for the measurements. b The corresponding inverse spin Hall signal as a function of out-of-plane magnetic field. The voltage jump is denoted as ∆VISHE. c The corresponding spin Hall signal as a function of out-of-plane magnetic field.