Fig. 2: Magneto-transport in exfoliated FGaT and switching of FGaT/Pt devices.
From: Current-induced switching of a van der Waals ferromagnet at room temperature
a Temperature dependent hysteresis plots of the device for out-of-plane field sweeps (\({{{{{\bf{H}}}}}}\parallel c\)). Data offset along \(y\)-axis for clarity. Inset: Schematic of measurement geometry. b Variation of anomalous Hall resistance of a (29 nm) FGaT flake against temperature, indicating a Curie temperature of \(\approx\) 328 K. Insets – optical image of the FGaT Hall bar on bottom left, zoomed in view of \({R}_{{{{{{\rm{xy}}}}}}}^{{{\rm{AHE}}}}-T\) close to the Curie temperature. c Comparison of room temperature Hall resistance curves of the FGaT device for field swept OOP (\({{{{{\bf{H}}}}}}\parallel c\)) and in-plane (\({{{{{\bf{H}}}}}}\perp c\)), with anisotropy field of \({H}_{{{{{{\rm{k}}}}}}}\) = 38 kOe denoted by vertical dashed lines. Inset: Low field zoom-in view of the plots. d Room temperature polar MOKE curve of a (48 nm) FGaT flake, indicative of strong PMA and a coercivity \({H}_{{{{{{\rm{c}}}}}}}\) = 235 Oe. e Optical image of the FGaT (57.9 nm)/Pt (6 nm) device (left) and its AFM micrograph (right). f Current sequence applied to the FGaT/Pt device for magnetization switching experiments, with the inset clarifying the nature of write pulses (\({t}_{{{{{{\rm{write}}}}}}}\)) and read pulses (\({t}_{{{{{{\rm{read}}}}}}}\)). g Cyclic magnetization switching curves observed for the FGaT/Pt devices over four consecutives current pulsing loops, at 300 K under in-plane bias field of 100 Oe. Scale bars: 5 \({{{{{\rm{\mu }}}}}}{{{{{\rm{m}}}}}}\).
