Fig. 2: Electromechanical response of defective BTO lateral devices. | Nature Communications

Fig. 2: Electromechanical response of defective BTO lateral devices.

From: Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Fig. 2

a Averaged voltage (top) and corresponding averaged displacement (D) response (bottom) as a function of time and lateral measurement setup schematic (inset). Optical micrograph of IDE and corresponding dimensions (in µm) are shown in Supplementary Fig. 2(d (inset) and e). b Fast Fourier Transform of band pass filtered (range shown in yellow box) displacement-time response shown in inset. c Averaged strain-electric field response obtained from data shown in the inset of b. Source data are provided as a source data file.

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