Fig. 2: Phase-engineered synthesis of α-/β-Te on monolayer WS2.
From: Phase-engineered synthesis of atomically thin te single crystals with high on-state currents
a–g Schematic illustration (a–c) and optical microscopy images (d–g) of ultrathin Te single crystals on WS2 as the Ar gas flow rate increased from 80 to 175 sccm at a growth temperature of 470 °C and a growth time of 10 min. h, i X-ray diffraction (XRD) characterization of α-Te nanosheets (h) and β-Te nanoribbons (i). The standard XRD cards PDF#97-005-2499 and PDF#36-1452 in h and i represent the R-3 m (166) and P3121 (152) space groups, corresponding to the α-Te and β-Te crystal structures, respectively. j, k Typical Raman spectra of α-Te nanosheets (j) and β-Te nanoribbons (k). The insets show the corresponding Raman mapping images of the α-Te nanosheets (j) and β-Te nanoribbons (k) at 104 and 126 cm−1, respectively. Scale bars: 10 µm in (d–g) and 2 µm in (j, k).
