Fig. 5: Electrical characterization of the β-Te transistor.
From: Phase-engineered synthesis of atomically thin te single crystals with high on-state currents
a, b The drain source current-drain source voltage·(lds-Vds) output curves under various gate voltages from 40 V to -40 V (-5 V step) (a) and the drain source current-gate source voltage·(lds-Vgs) transfer curves under various bias voltages from -0.4 (blue) to −1 V (purple) (-0.3 V step) and from −1 V (purple) to -4 (blue-gray) (-0.5 V step) (b) of the β-Te device with a channel length of 1.02 μm on h-BN/80-nm Si3N4/Si substrates. c, d Output curves under various gate voltages from 60 V to −60 V (−10 V step) (c) and transfer curves under various bias voltages (red, −0.1 V; blue, −0.4 V; green, −0.7 V; purple, −1 V; pink, −1.5 V) (d) of the β-Te device with a channel length of ~46 nm on h-BN/80-nm Si3N4/Si substrates. The scale bar in the inset c: 100 nm. e Cumulative distribution of the two-terminal mobility values of 44 β-Te transistors. The red dots and solid line represent the cumulative distribution values and trend of mobility, respectively. f Comparison of the ON-state current density and mobility with those of other 2D materials2,8,28,29,38,39,40,41,42,43,44,45,46,47,48,49,50,51,52,53,54,55,56. The detailed values of (f) are shown in Supplementary Table 3.
