Fig. 6: XRD, absorption spectra, and I–V characteristics of Cs-doped and Cs–Eu-doped FAPbI3 single crystals. | Nature Communications

Fig. 6: XRD, absorption spectra, and I–V characteristics of Cs-doped and Cs–Eu-doped FAPbI3 single crystals.

From: Toward stabilization of formamidinium lead iodide perovskites by defect control and composition engineering

Fig. 6

X-ray diffraction patterns of the a Cs-doped and b Cs-Eu mixed-cation-doped FAPbI3 perovskite single crystals, before and after 30-day and 45-day air exposures. c UV–Vis-NIR absorption spectra of a series of freshly prepared perovskite single crystals. d The optical bandgap derived from the Tauc plots (based on the data in c). α is absorption coefficient, h is Planck constant, and ν is frequency of incident light. e UV–Vis-NIR absorption spectra of the Cs-doped and Cs-Eu mixed-cation-doped samples with the Eu doping concentrations of 0.25%, 0.50%, and 1.00% before and after 30-day exposure. Current−voltage (I-V) curves and relevant typical SCLC analyses of f, g Cs single-doped and h, i Cs–Eu mixed-doped FAPbI3 perovskite single crystals, before and after a 30-day air exposure, respectively. The regions are marked for Ohmic (n = 1), trap-filled limit (n > 3), and Child’s regime (n = 2). VTFL is the trap-filled limit voltage. We calculated the carrier mobility (µ) and trap densities (Nt) by fitting the I-V data.

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