Fig. 2: Structural characterization of the MoSe2–CrSe2 lateral heterostructures.
From: Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2
a STM image of the MoSe2–CrSe2 lateral heterostructure with a continuous mirror twin boundaries (MTB) linear defect crossing through the interface (VS = − 1.0 V, It = 3 pA). b The corresponding ball-and-stick model of the lateral heterostructure with an MTB line defect. c High-resolution STM image of the atomically sharp interface with 3 × 3 moiré pattern in the MoSe2 region (VS = − 0.4 V, It = 0.6 nA). d, e Constant-height non-contact atomic force microscopy (nc-AFM) images of the MoSe2–CrSe2 interfaces taken at the Se-edge and Mo-edge of MoSe2 nanoribbon with partly overlaid structure models, respectively. The scanning areas are labeled by the purple and black dashed squares in (a), respectively (Tip height z = −360 pm relative to the height at the setpoint 1.3 V, 10 pA). f Density functional theory (DFT) simulated STM and constant-height nc-AFM images with the corresponding structure model.
