Fig. 3: Electronic structures at the interfaces of MoSe2–CrSe2 lateral and CrSe2/MoSe2 vertical heterostructures.
From: Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2
a STM topography of MoSe2–CrSe2 lateral heterostructures with straight interfaces (VS = − 1.3 V, It = 30 pA). b Real-space imaging of the band profile of the MoSe2–CrSe2 lateral heterostructure plotted in terms of Log (dI/dV). The dI/dV spectra were acquired along the white arrow crossing the interface with a total length of 11 nm. The vertical dashed line indicates the interface of the lateral heterostructure. c The magnified band profile in the CrSe2 region exhibits a slight downward band bending near the interface. d The dI/dV spectra taken on the CrSe2 and MoSe2 regions near the interface (red line for CrSe2, blue line for MoSe2) compared with the ones away from the interface (black lines). The arrows indicate the band shifts in the dI/dV spectra. e Large-scale STM image of the CrSe2/MoSe2vertical heterostructure formed with the second-layer (SL) CrSe2 and first-layer (FL) MoSe2 in the vertical structure (VS = − 1.3 V, It = 30 pA). The inset shows the height profile across the heterostructure. f 2D plot of the dI/dV spectra across the step of the CrSe2/MoSe2 vertical heterostructure. The dI/dV spectra were taken from −1.9 V to 1.1 V along the white arrow in (e) with a total length of about 11 nm. The edge state with a narrow gap is marked by the vertical dashed lines and orange lines. g Selected subset of the dI/dV spectra taken along the white arrow. The dI/dV spectra are offset for clarity. h DFT-calculated band structures at the interface of the vertical heterostructure. The calculated differential charge density with the side view of the corresponding structure model is shown in the upper panel.
