Fig. 2: Seamless stitching of unidirectional MoS2 domains.
From: Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control
a HAADF-STEM image of the merging area between two unidirectional MoS2 domains. The orange dashed lines outline the edge of the two aligned MoS2 domains. b 1–6: six typically atomic-resolution HAADF-STEM images obtained from the locations marked in a, showing that no boundary was formed, the d-spacings of the (10\(\bar{1}\)0) and (11\(\bar{2}\)0) planes of MoS2 are 0.274 and 0.158 nm, respectively. Scale bars, 0.5 nm. The atomic-resolution HAADF-STEM images are filtered to enhance the contrast. c, e Optical microscopy (upper panel) and polarized second-harmonic generation (SHG) mapping (lower panel) of two aligned (c) and misaligned (e) MoS2 domains. Scale bars, 5 μm. d, f Polarized SHG mapping of continuous film formation of single oriented domains (d) and misaligned domains (f). Scale bars, 20 μm.
