Fig. 2: Performance characterization of N-LEM. | Nature Communications

Fig. 2: Performance characterization of N-LEM.

From: Cross-layer transmission realized by light-emitting memristor for constructing ultra-deep neural network with transfer learning ability

Fig. 2

a I-V characteristics of N-LEM measured in continuous double-sweep model. b Charge trapping process inside the device during electrical pulse stimulation. c Current signal and optical signal under 10 continuous voltage pulses. d NL fitting of electrical and optical signals of 10 pulses. (e) Conductivity changes of devices caused by continuous electric pulses. f Gain of EPSC and EPSB under different pulse numbers. g Schematic diagram of PPF exponential fitting curve of device. h UV irradiation leads to current and light intensity suppression in devices (4 V, 30 ms). i Current variation of equipment in 15 consecutive I-V scans.

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