Fig. 2: DC shot noise (DSN) for bilayer MoS2.
From: Quantifying the photocurrent fluctuation in quantum materials by shot noise
a The side views of bilayer MoS2 with point group (PG) 3R and 2H, respectively, where 3R/2H breaks/respects \({{{{{\mathcal{P}}}}}}\) symmetry. b The band structures for bilayer MoS2 with different PGs. The Fermi level indicated by the horizontal dashed line is placed on the top of valence band. c, d The shift DSN \({s}^{\sigma }={\sigma }_{C}^{xxz}{E}^{2}\) and the injection DSN \({s}^{\eta }={t}_{0}{\eta }_{L}^{xxx}{E}^{2}\) for bilayer MoS2 with PG 3R and 2H, respectively, where V = 1 cm3, t0 = 10−14(s), and \(E=1{0}^{7}/\sqrt{2}({{{{{\rm{V}}}}}}/{{{{{\rm{m}}}}}})\)57. e, f The k-resolved integrands for the \({\sigma }_{C}^{xxz}[\hslash \omega=2.4({{{{{\rm{eV}}}}}})]\) and \({\eta }_{L}^{xxx}[\hslash \omega=2.1({{{{{\rm{eV}}}}}})]\) only for 2H MoS2.
