Fig. 1: UTAF fabrication. | Nature Communications

Fig. 1: UTAF fabrication.

From: Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process

Fig. 1

a 3D schematics showing the ion-beam thinning-back process flow in UTAF fabrication. b Series of schematic diagrams exhibiting the detailed growth process of Ag film using the IBS technique. The inset SEM images from top to bottom present the morphologies at nominal thicknesses of 1, 4, and 9 nm. c Serial schemes showing the thinning-back and polishing process of the Ag film using glancing ion beam etching with a given incident angle referring to sample surface. The inset SEM images from left to right demonstrate the topography evolution of the Ag film with reduced thicknesses of 8, 6 and 4.5 nm. d Photograph of 4.5-nm-thick UTAF on a PET plate (60 mm × 35 mm). Scale bars are 50 nm for all insets in panels (b, c).

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