Fig. 4: Optical and electrical characteristics of UTAFs. | Nature Communications

Fig. 4: Optical and electrical characteristics of UTAFs.

From: Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process

Fig. 4

a Rs for UTAFs with changing reduced thicknesses during thinning back. Raw data (hollow dots) of Rs from five random positions are extracted for each sample. The line fit is the plot of Rs of Ag films in the FS-MS model. b Corresponding measured visible transmittance of UTAFs. Solid lines represent continuous UTAFs. The tAg values labeled on solid lines is the optical thickness measured by ellipsometry. The dashed line represents the particle-shaped UTAF fabricated by direct deposition using the IBS technique. c Average visible haze of the UTAFs with different thickness. The inset shows the principle and calculation of optical haze for a film. d FoM of UTAFs with changing reduced thickness tAg. e Photographs of 9-nm-thick UTAFs on a 12-inch glass wafer (top panel) and a 300 × 300 mm2 PET plate (bottom panel).

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