Fig. 2: System’s properties for increasing electronic (fermionic) occupation.
From: Excitonic Mott insulator in a Bose-Fermi-Hubbard system of moiré WS2/WSe2 heterobilayer
a–c Normalized PL spectrum as a function of gate voltage (νe) for three different pump intensities: I = 0.08 μWμm2 (a), I = 12.1 μW/μm2 (b) and I = 1229 μW/μm2 (c). The peaks associated with single (X1) and double (X2) occupancy are indicated on each panel. The dashed lines indicate the gate voltages at which the PL intensity X2 exceeds X1. The dashed black lines of (d) indicate the measurement ranges of (a–c). e–g Evolution of the PL intensity for X1 (red) and X2 (blue) as a function of gate voltage for the same values of pump intensities displayed in (a–c). The electron filling factor at which X2 exceeds X1 decreases as pump intensity increases. h shows the gate voltage at which the intensity of X2 exceeds that of X1, as a function of the total PL intensity. The error bars represent the standard errors for the parameter estimates in the fitting routine.
