Fig. 3: System’s properties for increasing excitonic (bosonic) occupation.
From: Excitonic Mott insulator in a Bose-Fermi-Hubbard system of moiré WS2/WSe2 heterobilayer
a–c Normalized PL spectrum as a function of the total collected PL power for three different electronic filling factors. The peaks associated with single (X1) and double (X2) occupancy are indicated on each panel. d indicates the ranges of I and νe for the measurements shown in (a–c). e–g evolution of the PL power for X1 (red) and X2 (blue) as a function of the total collected PL power for the same values of νe displayed in (a–c). f displays the fitting function (dashed black line) employed to extract Psat and \({\,{{\mbox{P}}}\,}_{1}^{\max }\) (described in the text). h Evolution of Psat (brown) as a function of the gate voltage (νe). As expected from our phase-space filling model, its value reduces with increasing filling factor. The quantity \({{{\mbox{P}}}}_{{{{{{{{\rm{sat}}}}}}}}}/{\,{{\mbox{P}}}\,}_{1}^{\max }\) (green) shows good agreement with the theoretical model. The error bars represent the standard errors for the parameter estimates in the fitting routine.
