Fig. 2: The structure and basic operation of GMT device. | Nature Communications

Fig. 2: The structure and basic operation of GMT device.

From: Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors

Fig. 2

a The cross-sectional high-resolution transmission electron microscope (HRTEM) images along with n-type semiconductor region (scale bar = 50 nm). b The optical microscope (OM) image (scale bar = 500 μm) (b). c The HRTEM images along with p-type semiconductor region. The false-color modification was attempted to distinguish each layer in HRTEM images (scale bar = 50 nm). d The transfer characteristics (absolute value of drain current ( | ID | ) versus gate voltage (VG)) of Gaussian-like memory transistor (GMT) device with different drain voltage (VD). e, f The transfer curve of 100 consecutive sweeps (e) and mean (μ) and standard deviation (σ) values (f) of the GMT device at drain voltage (VD) = 9.8 V.

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