Fig. 3: GMT Device programming method. | Nature Communications

Fig. 3: GMT Device programming method.

From: Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors

Fig. 3

a–c Schematic illustration of Gaussian-like memory transistor (GMT) device operation (a), n-type programming (b), and p-type programing (c) with the drain voltage (VD), gate voltage (VG), p-type programming voltage (Vprg,P), and n-type programming voltage (Vprg,N). d, e The change in transfer characteristics (absolute value of drain current ( | ID | ) versus VG) (d) and threshold voltage (VT) according to n-type semiconductor programming (e). f, g The change in transfer characteristics (f) and VT according to p-type semiconductor programming (g).

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