Fig. 4: Gaussian factor control of GMT device. | Nature Communications

Fig. 4: Gaussian factor control of GMT device.

From: Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors

Fig. 4

a A schematic illustrations of the same amount of charges with the same polarity injected through the separate floating gate (FG) and corresponding transfer curve shift of Gaussian-like memory transistor (GMT) device. Blue and red symbols represent hole and electron carriers, respectively. b A schematic illustrations of the same amount of charges with different polarity injected through the separate floating gate (FG) and corresponding transfer curve shift of GMT device. c, d The transfer characteristics (absolute value of drain current ( | ID | ) versus gate voltage (VG)) measured in Case 1 (movement of p-type threshold voltage (ΔVT,P) = movement of n-type threshold voltage (ΔVT,N)) with the p-type programming voltage (Vprg,P) < 0 (c) and Vprg,P > 0 (d). e The mean (μ) and standard deviation (σ) values extracted from transfer curves with respect to Vprg,P measured in Case 1. f, g The transfer characteristics measured in Case 2 (ΔVT,P = − ΔVT,N) with the condition of Vprg,P > 0 (f) and Vprg,P < 0 (g). h The mean (μ) and standard deviation (σ) values extracted from transfer curves with respect to Vprg,P measured in Case 2.

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