Fig. 4: Optoelectronic properties of thin monocrystals. | Nature Communications

Fig. 4: Optoelectronic properties of thin monocrystals.

From: Universal growth of perovskite thin monocrystals from high solute flux for sensitive self-driven X-ray detection

Fig. 4

a Photoconductivity measurement of Cs0.02FA0.2MA0.78PbI3 thin monocrystal device from high-flux growth (HFG). Normalized time-of-flight b hole and c electron charge transient current curves of HFG thin monocrystal device under various reverse bias voltages. The inset shows the charge transit time versus the reciprocal of bias voltage. The excitation wavelength is 337 nm. d SCLC measurements of hole-only thin monocrystal devices. The device structure is ITO/PTAA/perovskite/spiro-OMeTAD/Ag. e Trap density of states of thin monocrystal devices. f Radar chart comparing diffusion length, hole mobility, resistivity, carrier lifetime, and μτ product for testing the optoelectronic properties of Cs0.02FA0.2MA0.78PbI3 thin monocrystals.

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