Fig. 4: The analysis of thermal transport in GaN-BAs heterostructures from MD and MC simulations. | Nature Communications

Fig. 4: The analysis of thermal transport in GaN-BAs heterostructures from MD and MC simulations.

From: Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

Fig. 4

a The temperature distribution in the GaN-BAs heterostructure in steady state using neural network potential (NNP). Inset is the model for NEMD simulations. b The interfacial thermal conductance (ITC) with respect to temperature, in comparison with experimental measurements measured by time-domain thermoreflectance (TDTR). c The comparison of phonon density of states between BAs and GaN. d The spectral heat flux in GaN-BAs heterostructures, where the dash line indicates the interface and the color indicates the normalized density of heat flux.

Back to article page