Fig. 2: Low-voltage-operated, high-stability intrinsically stretchable organic transistors.
a Schematic diagram illustrating the device configuration and constituent materials for high-density stretchable organic transistors. b Chemical structures of the PDPP-BT semiconducting polymer and SEBS elastomer. c Representative transfer curve from the short-channel stretchable organic transistor arrays (W/L = 8 μm/2 μm). The applied drain-to-source voltage denoted as VDS, is −5 V. d Typical output characteristic showing the linear behavior at the small drain voltage region for the ohmic contact. e Histograms of mobility extracted from the 10 × 10 transistor array stochastically selected in the sheet. f Comparison of previously reported intrinsically stretchable organic transistors with our high-stability transistor in terms of the channel length, operation voltage, and subthreshold swing (see details in Supplementary Table 3). g Changes in the on- and off-current during 250 switching cycles. h On-current and mobility under different stretching levels parallel and perpendicular to the charge transport direction. i On-current and mobility obtained at 25% strain during 1000 stretching cycles parallel to the charge transport direction.
