Fig. 3: Ultrasensitive detection performance of intrinsically stretchable transistor-based organic X-ray image sensors.

a Transfer characteristics of the device measured in the dark and irradiation for the intrinsically stretchable organic transistor (W/L = 8 μm/2 μm) when biased at V_DS = −5 V. b Drain current versus voltage curves measured under X-ray irradiation at different dose rates. c Dynamic response of the stretchable transistor-based X-ray detector with −5 V bias voltage (V_DS) at the off-state (V_G = 0.5 V). d X-ray induced photocurrent versus dose rate in a vacuum (<100 Pa). e Performance comparison including the detection limit, operation voltage, and sensitivity of current reported X-ray detectors with our prepared stretchable X-ray sensors in this work (see details in Supplementary Table 4). f X-ray induced photocurrent drift of the intrinsically stretchable X-ray detector for 500 min under 24.34 nGy_air s⁻¹ dose rate, biased at V_DS = −5 V and V_G = 0.5 V. g Visualized conformability and ultra-flexibility of the stretchable X-ray image sensors wrapped around a water balloon under stretching. h X-ray photocurrent and dark current versus strain parallel and perpendicular to the charge transport direction under 24.34 nGy_air s⁻¹ dose rate, biased at V_DS = −5 V and V_G = 0.5 V. i Long-term detection stability of the short-channel intrinsically stretchable organic transistor stored for 8 months in a glove box under different dose rates at V_DS = −5 V (V_G = 0.5 V).