Fig. 1: Quantum dot (QD) sample structure and data labeling.
From: Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots
a The schematic of the sample structure. The thick GaAs buffer layer is grown on an n-type GaAs substrate at 600 °C. Subsequently, the substrate is cooled to 450–500 °C for the growth of InAs QDs. b–e The 2 μm × 2 μm atomic force microscope (AFM) images of QDs with varied labels. “zero”: there are no QDs on the surface. “low”: the InAs QDs sample with density less than 1 × 1010 cm−2. “middle”: the InAs QDs sample with density range from 1 × 1010 cm−2 to 4 × 1010 cm−2. “high”: the InAs QDs sample with density higher than 4 × 1010 cm−2. f–i Corresponding reflection high-energy electron diffraction (RHEED) images with varied labels.
