Fig. 4: Energy loss analysis.

a–c EL spectra of the PSCs based on the control PVK, PVK/MBAPbI3 and PVK/MVPb2I6 under different applied voltage bias. d EQE-EL spectra of the PSCs operating in light-emitting diodes. e VOC loss calculation in the devices based on the control PVK, PVK/MBAPbI3 and PVK/MVPb2I6, including radiative recombination above Eg (ΔV1), black-body radiation loss (ΔV2) and non-radiative recombination loss (ΔV3). f tDOS curves of the three devices, in which 0.35 to 0.40 eV is a shallow trap state (band 1), and >0.4 eV is a deep-trap state (band 2 and band 3). g Light intensity dependent Voc values. h FF loss calculation in the devices based on the control PVK, PVK/MBAPbI3 and PVK/MVPb2I6. i Schematic illustration of the interface energy loss in the PVK/MVPb2I6 based PSCs. Source data are provided as a Source Data file.