Fig. 1: Platform for stretchable metal oxide transistor array and circuitry. | Nature Communications

Fig. 1: Platform for stretchable metal oxide transistor array and circuitry.

From: Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale

Fig. 1

a Schematics of stretchable metal oxide transistor array and device architecture. b Cross-sectional structure of stretchable transistor with dual rigid islands. c Chemical structures of urethane acrylate (UA) and epoxy acrylate (EA) oligomers for rigid island embedded stretchable substrate. An acrylic-crosslinking reaction initiated by ultraviolet light enables strong adhesion between the polyepoxy acrylate (PEA) and polyurethane acrylate (PUA) through strong covalent bonding. d Schematic illustration of amorphous indium-gallium-zinc-oxide (a-IGZO) transistors with eutectic gallium–indium (EGaIn) liquid metal interconnection. e, Optical micrographs of a-IGZO transistor under 0% (left) and 30% (right) strain. f Optical micrograph of patterned EGaIn liquid metal with different linewidths. g Electrical resistance variation of EGaIn liquid metal interconnects as a function of tensile strain. h Resistance variation of EGaIn liquid metal interconnects under 10,000 cyclic stretching (60% strain). i Photographs of stretchable a-IGZO transistor arrays and circuitry ( ~ 2000 transistors in ~5 × 5 cm2).

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