Fig. 3: Electrical characteristics of stretchable a-IGZO transistors under strain. | Nature Communications

Fig. 3: Electrical characteristics of stretchable a-IGZO transistors under strain.

From: Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale

Fig. 3

a Photograph of stretchable a-IGZO transistors on a stretching tester. b, Optical micrographs of a-IGZO transistor under stretching up to 60% and releasing. c, d Transfer characteristics of a-IGZO transistor as a function of tensile strain (c), parallel, and (d), perpendicular direction to the channel. e, f Variations of carrier mobility, threshold voltage, and subthreshold slope (SS) with tensile strain shown in (c, d), respectively. g, h Transfer characteristics of a-IGZO transistor during 10,000 stretching cycles (30% strain) (g), parallel, and (h), perpendicular direction to the channel. i, j Statistical data of carrier mobility, threshold voltage, and subthreshold slope in 50 stretchable a-IGZO transistors under (i), 0%, and (j), 30% strain.

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