Fig. 5: Device fabrication and performance of PbI2 and related perovskites through water-assisted techniques.

a Schematic flow of the water-flow-assisted transfer technique for positioning PbI2. b Schematic flow of the water-etching technique for patterning PbI2. c Transfer curves of PbI2 and MAPbI3 devices under 405-nm light illumination with varying laser powers at bias voltage (Vds) = 2 V. d Gate-tunable photoluminescence spectra of PbI2 and MAPbI3 under 405-nm light illumination. e Optical image of a large-size PbI2 device with cross-array architecture. f Optical image and zoom-in scanning electron microscope images of highly integrated planar devices based on patterned PbI2. g Champion photocurrent and photo-responsivity results of PbI2 and MAPbI3 devices under 405-nm light illumination with cross-array architecture (star symbol) and planar devices (square) at Vds = 2 V. h Statistical distribution chart of PbI2 and MAPbI3 photo-responsivities under 405-nm light illumination with cross-array architecture (upper panel) and planar devices (bottom panel) at Vds = 2 V.