Fig. 3: Electrical control of the NODE.

a Schematic of a device concept. Current-induced magnetization switching enables electrical control of the NODE. b We deposit eight gold electrodes on the top surface of a bulk mm-sized CeAlSi crystal, which allows us to pass current through the sample. Here, we focus on current along the \(\hat{{{{{{{{\bf{x}}}}}}}}}\) direction, which causes magnetization switching along the \(\hat{{{{{{{{\bf{y}}}}}}}}}\) direction. c Current hysteresis loop. A current of 100 mA fully switches the magnetization. We measure p-polarized SHG in forward direction with s-polarized incident light. Therefore, high and low intensity correspond to M_+y and M_−y states, respectively. Error bars denote the standard deviation of three consecutive measurements. d Current-induced magnetization switching is highly reproducible. Here, we show 10 consecutive cycles. e Enlarged view of the highlighted region in d. Dashed lines correspond to the remanent states. f Scanning electron microscopy image of a micro-sized device manufactured by focused-ion-beam milling of CeAlSi (red) on gold electrodes (gold). Platinum contacts (gray) ensure good electrical connections. g Currents as small as 3 mA can control the magnetization state. Red and blue curves correspond to consecutive measurements with increasing and decreasing current, respectively. We detect s-polarized SHG, which can discriminate M_±x states. A hysteresis is suppressed possibly due to shape anisotropy or residual strain in the sample^36,40,41. h, i SHG polarization dependence under application of -3 mA and +3 mA, respectively. Changes are most prominent for s-polarized SHG (red). Solid lines are fits corresponding to magnetic M_−x and M_+x states, respectively (Supplementary Section 9).