Fig. 3: Direct photolithography of ZIF-8@BrijC10.
From: Crosslinking-induced patterning of MOFs by direct photo- and electron-beam lithography
a–d SEM images of ZIF-8@BrijC10 patterns in the formats of letters, complex pattern, microarrays, and rectangles. The source image for making the pattern in (b) is adapted with permission from Visual China (www.vcg.com/creative/1308528815). c also shows the EDS colored mapping of patterned microdot arrays for different elements. e Top-view SEM images of pristine and patterned MOF films. Scale bars, 200 nm. f AFM image of the patterned film. The root mean square (RMS) roughness is 13 nm. g Photographs of a large-area pattern of the periodic table of elements on a 10 cm wafer. The zoomed-in view. h A photograph of patterned ZIF-8@BrijC10 film on a flexible substrate. The photomask used for h has the form of 1951 US Air Force Target, a standard for evaluating patterning quality. Scale bars, a 500 μm, b 500 μm, c 100 μm (SEM) and 50 μm (EDS mapping), d 20 μm.
