Table 2 Summary of device characteristics of devices A−K and reference devices
Device | Dopant | Vona (V) | CEb (cd A−1) | PEc (lm W−1) | EQEd (%) | Lmaxe (cd m−2) | λELf (nm) | FWHMg (nm) | CIE (x, y)h | LT95i (hour) @ 1000 cd m−2 |
|---|---|---|---|---|---|---|---|---|---|---|
A (reference) | 0.5 wt% ω-DABNA | 3.0 | 101.9 | 106.2 | 30.8/ 30.4/ 29.2/− | — | 512 | 25 | (0.13, 0.73) | 34 |
B | 0.5 wt% ω-DABNA-M | 3.2 | 114.1 | 114.5 | 32.7/ 32.0/ 30.3/− | — | 515 | 25 | (0.15, 0.74) | 24 |
C | 0.5 wt% ω-DABNA-PH | 3.1 | 123.6 | 124.8 | 31.8/ 30.5/ 27.4/− | — | 521 | 30 | (0.19, 0.74) | 27 |
D | 0.5 wt% ω-DABNA: 20 wt% 3Cz2DPhCzBN | 3.0 | 82.5 | 86.4 | 28.0/ 25.1/ 23.9/ 19.5 | 92351 | 511 | 24 | (0.15, 0.64) | 188 |
E | 0.5 wt% ω-DABNA-M: 20 wt% 3Cz2DPhCzBN | 3.0 | 86.4 | 90.5 | 28.3/ 26.8/ 25.0/ 19.4 | 84098 | 515 | 25 | (0.18, 0.65) | 230 |
F | 0.5 wt% ω-DABNA-PH: 20 wt% 3Cz2DPhCzBN | 3.0 | 89.6 | 93.8 | 27.3/ 25.6/ 24.6/ 21.1 | 134631 | 521 | 30 | (0.20, 0.66) | 205 |
G | 1 wt% ω-DABNA: 20 wt% 3Cz2DPhCzBN | 3.5 | 76.6 | 75.2 | 26.8/ 22.3/ 21.2/ 16.8 | 51048 | 513 | 23 | (0.14, 0.69) | 143 |
H | 1 wt% ω-DABNA-M: 20 wt% 3Cz2DPhCzBN | 3.0 | 94.2 | 98.7 | 28.2/ 25.3/ 22.6/ 16.6 | 72622 | 517 | 23 | (0.17, 0.70) | 110 |
I | 1 wt% ω-DABNA-PH: 20 wt% 3Cz2DPhCzBN | 3.0 | 94.2 | 98.6 | 26.5/ 24.9/ 23.1/ 19.6 | 155964 | 522 | 29 | (0.21, 0.69) | 109 |
J | 1 wt% ω-DABNA-M: 20 wt% 4CzIPN | 2.8 | 60.0 | 67.3 | 19.1/ 15.8/ 12.0/ 7.3 | 19302 | 517 | 26 | (0.27, 0.66) | 63 |
K | 1 wt% ω-DABNA-PH: 20 wt% 4CzIPN | 2.6 | 89.0 | 107.5 | 24.4/ 21.7/ 18.5/ 12.6 | 138483 | 522 | 30 | (0.24, 0.70) | 580 |
Ref_1 | 20 wt% 3Cz2DPhCzBN | 3.2 | 62.1 | 61.0 | 23.0/ 22.4/ 21.7/ 16.3 | 56290 | 498 | — | (0.22, 0.48) | 89 |
Ref_2 | 20 wt% 4CzIPN | 3.0 | 71.5 | 74.9 | 21.1/ 20.5/ 19.2/ 16.0 | 139366 | 528 | — | (0.33, 0.60) | 403 |
