Fig. 2: Vision-adaptive behaviors of ISNVaTs.

a Schematic of the intrinsically stretchable neuromorphic vision-adaptive transistor (ISNVaT) based on elastic heterojunction. b Typical transfer curves of the ISNVaT with a viscoelastic QCM perovskite film under ultraviolet illumination with various intensities. c Switching current ratio (I_light/I_dark) as a function of P_in extracted from ISNVaTs based on neat and hybrid perovskite films with various SEBS contents. d Switching current ratio (I_light/I_dark) as a function of P_in extracted from ISNVaTs based on hybrid perovskite films (PQD: SEBS = 10:1 w/w) with different surface morphologies. e Light intensity dependence (top, V_G = 0) and gate voltage dependence (bottom, P_in = 356.69 μW cm⁻²) adaptation behaviors of ISNVaTs. adaptation behaviors of ISNVaTs. (dim: 6.41 μW cm⁻², normal: 356.69 μW cm⁻², bright: 698.09 μW cm⁻²; positive: +10 V, normal: 0 V negative: −10V). f Current change ratio (CCR) extracted at different lighting power density (P_in) and g different gate voltages (V_G) h Photograph of an array of ISNVaTs under the mechanical strain. i Strain-tolerance characteristics of ISNVaTs. j Tensile stability of ISNVaTs with different stretching cycles. k CCR extracted at different stretching strains demonstrating the trends of light-intensity-dependence (top) and gate-voltage-dependence (bottom) under ultraviolet light.