Fig. 3: Emergence of overscreened doublet regions with 3 LMs in charging diagrams.

a-c Zero-bias conductance G versus the two (left/right) SI gate voltages VL, VR for three values of \({({E}_{c}/\Delta )}^{*}\). Numbers in the diagram indicate the total number of LMs in the device, supported by calculations in Fig. 1; schematic diagrams present the character of these states (d).