Fig. 3: Structural characterizations for high-entropy A5MnSb2 crystal.
From: High-entropy engineering of the crystal and electronic structures in a Dirac material
a SHG intensity (radial axis in arb. units) as a function of the polarization angle of the incident light (angular axis; 0° and 90° correspond to lab x and y directions, respectively) measured for A5MnSb2. The sample shows 90° domains and was mounted so that the crystallographic a/b and b/a axes of each domain are almost parallel to lab x and y directions, respectively. b Experimental ADF-STEM image along b [010] and c [100] zone axis with a superimposed atomic structure. The lines connect the nearest Sb atoms, whose color indicates the Sb–Sb distances. The schematic between the two ADF-STEM images defines two Sb–Sb distances, d1 and d2. d SAED pattern along [010] zone axis, where the inset highlights the additional 00l reflection spots (l = odd integers). The contrast is reversed to well visualize weak diffraction spots. e Crystal structure of the high-entropy P21mn structure, where the random distribution of the A site is represented by different colors of the A-site atoms.
