Fig. 2: Unidirectional current-driven magnetization reversal and stochastic switching of a 2L CrI3.
From: Tunneling current-controlled spin states in few-layer van der Waals magnets
a Voltage as a function of applied current of the 2L CrI3 tunnel junction device at B = 0.550 T. The arrows inside the left zoomed inset indicate the spin configurations of magnetic domains. b Tunneling resistance as a function of the magnetic field at two bias currents of 1 μA (top panel) and 2.2 μA (bottom panel). The circled 1 and 2 in (a, b) indicate the corresponding initial magnetic states. c Voltage as a function of applied current of the 2 L CrI3 tunnel junction device at B = 0.566 T (left panel) and 0.586 T (right panel). d Time snapshots of voltage for an applied DC current in the fluctuation region with time scales of 1 s (top panel) and 20 ms (bottom panel). e Schematic of magnetic domain-based stochastic spin-state switching between SAP and SP. All measurements were performed at T = 1.5 K. Zoomed insets are from the dashed black squares.
