Fig. 4: Field-tunable electronic structure from theoretical calculations, and layer-resolved energy contours for positive and negative bias voltages.

a–f Calculated intensity maps at constant energy of -0.2 eV for tBLG, tMBG and tDBG under positive (a–c) and negative (d–f) bias voltages with interlayer potential difference of Δ = 100 meV and −100 meV respectively. The scale bar in (a) is 0.1 Å⁻¹. g–i Schematic illustrations of field-induced selectively enhanced contribution under positive bias voltage from different layers of tBLG, tMBG and tDBG (indicated by dark and light shaded colors in the top panel schematic), and calculated layer-projected energy contours at −0.2 eV (lower panels, positive bias voltage with Δ = 100 meV). j–l Schematic illustrations of field-induced selectively enhanced contribution from different layers of tBLG, tMBG and tDBG under a negative bias voltage (top panels), and calculated layer-projected intensity maps at −0.2 eV (lower panels, Δ = −100 meV). The dotted rectangles are used to highlight the similarity between tBLG and tMBG at positive bias voltage, and tMBG and tDBG at negative bias voltage.