Fig. 5: Device performance of the crystalline Pb1.004S0.6Se0.4 + 0.001Cu sample. | Nature Communications

Fig. 5: Device performance of the crystalline Pb1.004S0.6Se0.4 + 0.001Cu sample.

From: Realizing thermoelectric cooling and power generation in N-type PbS0.6Se0.4 via lattice plainification and interstitial doping

Fig. 5

Comparison of the a weighted mobility μW, b power factor PF, c average power factor PFave, d ratio of μW and lattice thermal conductivity, e ZT value, f average ZT of this work and other PbS-based materials. The experimentally measured g output power P and h conversion efficiency η with respect to electric current I of the Pb1.004Se0.6S0.4 + 0.001Cu crystal sample, i Comparison of the power generation efficiency η for our sample and other sulfur-based TE materials.

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