Fig. 2: Magnetoresistive phase diagrams.
From: Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
a Magnetic field/temperature phase diagram of the three regions illustrated in Fig. 1c. b Thermal activation barrier (Ea) associated with region two extracted from an Arrhenius plot. The error bars describe the standard deviation of the linear fit in the Arrhenius plot. c Temperature dependence of three crossover magnetic fields (Bc) depicting the onset of linear magnetoresistance (\({{{{B}}}}_{{{{c}}}}^{{{{MR}}}}\)), the inflection point of the Hall resistance (\({{{{B}}}}_{{{{c}}}}^{{{{Rxy}}}}\)) and crossover to a field-independent tangent to the Hall angle (\({{{{{B}}}}_{{{{c}}}}^{{{{\theta }}}}}\)). The insets display the field dependence of the magnetoresistive derivative (dMR/dB), the Hall resistance (Rxy) and tan(\({{{\theta }}}\)) for T = 12.5 K where the three crossover fields are defined by the intersection of linear fits at low and high magnetic fields.
